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1

InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems

Simoyama, T., Yoshida, H., Jun-ichi Kasai, Mozume, T., Gopal, A.V., Ishikawa, H.

Journal:

IEEE Photonics Technology Letters

Year:

2003

Language:

english

File:

PDF, 200 KB

english, 2003

2

Intersubband transitions at 1.3 and 1.55 /spl mu/m in a novel coupled InGaAs-AlAsSb double-quantum-well structure

Neogi, A., Mozume, T., Yoshida, H., Wada, O.

Journal:

IEEE Photonics Technology Letters

Year:

1999

Language:

english

File:

PDF, 48 KB

english, 1999

3

1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells

Akiyama, T., Georgiev, N., Mozume, T., Yoshida, H., Gopal, A.V., Wada, O.

Journal:

IEEE Photonics Technology Letters

Year:

2002

Language:

english

File:

PDF, 182 KB

english, 2002

4

Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs–AlAs–AlAsSb Coupled Quantum Wells

Simoyama, T., Sekiguchi, S., Yoshida, H., Jun-ichi Kasai, Mozume, T., Ishikawa, H.

Journal:

IEEE Photonics Technology Letters

Year:

2007

Language:

english

File:

PDF, 149 KB

english, 2007

5

Enhancement of All-Optical Cross Phase Modulation in InGaAs/AlAsSb Coupled Quantum Wells Using InAlAs Coupling Barriers

Nagase, M., Akimoto, R., Simoyama, T., Guangwei, C., Mozume, T., Hasama, T., Ishikawa, H.

Journal:

IEEE Photonics Technology Letters

Year:

2008

Language:

english

File:

PDF, 109 KB

english, 2008

6

All-Optical Cross-Phase Modulation Generation by Ion Implantation in III–V Quantum Wells

Guangwei Cong, Akimoto, R., Gozu, S., Mozume, T., Hasama, T., Ishikawa, H.

Journal:

IEEE Photonics Technology Letters

Year:

2010

Language:

english

File:

PDF, 468 KB

english, 2010

7

Effects of shutter transients in molecular beam epitaxy

Shin-ichiro Gozu, Teruo Mozume, Haruhiko Kuwatsuka…

Journal:

Nanoscale Research Letters

Year:

2012

Language:

english

File:

PDF, 246 KB

english, 2012

8

Bandgap Control for Intersubband Transition in InGaAs/AlAsSb Coupled Double Quantum Wells

Feng, Jijun, Akimoto, Ryoichi, Gozu, Shin-ichiro, Mozume, Teruo, Hasama, Toshifumi, Ishikawa, Hiroshi

Journal:

IEEE Photonics Technology Letters

Year:

2013

Language:

english

File:

PDF, 1.33 MB

english, 2013

9

Self-aligned InP/InGaAs HBTs using T-shaped emitter electrodes

Hiroshi Masuda, Tomonori Tanoue, Tohru Oka, Akihisa Terano, Michael W. Pierce, Kazuhiko Hosomi, Kiyoshi Ouchi, Teruo Mozume

Journal:

Microwave and Optical Technology Letters

Year:

1996

Language:

english

File:

PDF, 617 KB

english, 1996

10

Gas source molecular beam epitaxy and X-ray absorption fine structure characterization of InGaAs/InP short period superlattices

Teruo Mozume, Hideo Kashima, Kazuhiko Hosomi, Kiyoshi Ogata, Kazuhumi Suenaga, Asao Nakano

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 439 KB

english, 1994

11

Effect of source-supply interruptions on the interface abruptness in gas source molecular beam epitaxy grown InGaAs/InP heterostructures

Teruo Mozume, Hideo Kashima, Kazuhiko Hosomi, Kiyoshi Ouchi, Hiromi Sato, Hiroshi Masuda, Tomonori Tanoue

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 508 KB

english, 1995

12

Tailored heterointerface formation in InGaAs/InP superlattices by gas source migration-enhanced epitaxy

Teruo Mozume, Hideo Kashima, Kazuhiko Hosomi, Kiyoshi Ogata, Kazuhumi Suenaga, Asao Nakano

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 628 KB

english, 1994

13

Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers

J. Kasai, T. Mozume

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 280 KB

english, 2005

14

Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy

T. Mozume, J. Kasai

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 239 KB

english, 2005

15

Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

T. Mozume, J. Kasai, M. Nagase, T. Simoyama, H. Ishikawa

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 150 KB

english, 2007

16

Strain compensation for InGaAs–AlAs–AlAsSb coupled double quantum wells by controlling the barrier layer composition

Masanori Nagase, Teruo Mozume, Takasi Simoyama, Toshifumi Hasama, Hiroshi Ishikawa

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 255 KB

english, 2007

17

Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs center barrier

Shin-ichiro Gozu, Teruo Mozume, Hiroshi Ishikawa

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 360 KB

english, 2009

18

High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

T. Mozume, S. Gozu

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 564 KB

english, 2009

19

Indices of refraction of InGaAs/Alas/AlAsSb multiple-quantum-wells measured by an optical waveguide technique

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2008

Language:

english

File:

PDF, 255 KB

english, 2008

20

Refractive index of high-carrier-doped InGaAs/AlAsSb coupled double quantum wells

Shin-ichiro Gozu, Teruo Mozume, Hiroshi Ishikawa

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2010

Language:

english

File:

PDF, 682 KB

english, 2010

21

Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

T Mozume, N Georgiev, H Yoshida

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 221 KB

english, 2001

22

Be redistribution in InGaAs and InP grown by gas source molecular beam epitaxy

Teruo Mozume, Kazuhiko Hosomi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 496 KB

english, 1997

23

Near-infrared intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy

Teruo Mozume, Haruhiko Yoshida, Arup Neogi, Makoto Kudo

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 210 KB

english, 1999

24

Effect of group-V species exchange at the interfaces of InGaAs/AlAsSb superlattice

Nikolai Georgiev, Teruo Mozume

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 159 KB

english, 2000

25

Photoluminescence characterization of type II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

Teruo Mozume, Nikolai Georgiev, Tetsuya Nishimura, Haruhiko Yoshida, Satoshi Nishikawa, Arup Neogi

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 140 KB

english, 2000

26

GaNAs grown by gas source molecular beam epitaxy

M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, K. Hosomi, T. Mozume

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 293 KB

english, 1997

27

Interface control of InGaAs/AlAsSb heterostructures

T Mozume, N Georgiev

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 923 KB

english, 2000

28

Raman scattering analysis of InGaAs/AlAsSb short-period superlattices

Nikolai Georgiev, Teruo Mozume

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 214 KB

english, 2000

29

Photoluminescence and photoreflectance characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

T Mozume, N Georgiev

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2002

Language:

english

File:

PDF, 104 KB

english, 2002

30

Strong carrier localization in Sb-terminated InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 97 KB

english, 2003

31

Absorption saturation of near-infrared intersubband transition in lattice-matched InGaAs/AlAsSb quantum wells

A. Neogi, H. Yoshida, T. Mozume, N. Georgiev, T. Akiyama, O. Wada

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2000

Language:

english

File:

PDF, 125 KB

english, 2000

32

Raman scattering study of InGaAs/AlAsSb and InGaAs/AlAs/AlAsSb heterostructures

T. Mozume, N. Georgiev, J. Kasai

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 78 KB

english, 2004

33

Optical functions of AlAsSb characterized by spectroscopic ellipsometry

T. Mozume, M. Tanaka, A. Yoshimi, W. Susaki

Journal:

physica status solidi (a)

Year:

2008

Language:

english

File:

PDF, 514 KB

english, 2008

34

Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

J. Kasai, T. Mozume, H. Yoshida, T. Simoyama, A. V. Gopal, H. Ishikawa

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 111 KB

english, 2004

35

Photoreflectance study of InGaAs/AlAsSb coupled double quantum wells

T. Mozume, S. Gozu

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 424 KB

english, 2012

36

Strain control of InGaAs/AlAs/AlAsSb quantum wells by interface termination method between AlAs and AlAsSb

Shin-ichiro Gozu, Teruo Mozume, Hiroshi Ishikawa

Journal:

Journal of Crystal Growth

Year:

2011

Language:

english

File:

PDF, 354 KB

english, 2011

37

Magneto-photoluminescence study of InGaAs/InP and InGaAs/AlAsSb quantum wells

T Mozume, J Kasai, A.V Gopal, N Kotera

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 195 KB

english, 2004

38

Enhancement of interband optical nonlinearity by manipulation of intersubband transitions in an undoped semiconductor quantum well

A Neogi, H Yoshida, T Mozume, O Wada

Journal:

Optics Communications

Year:

1999

Language:

english

File:

PDF, 290 KB

english, 1999

39

Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells

A. Neogi, H. Yoshida, T. Mozume, N. Georgiev, T. Akiyama, A. Tackeuchi, O. Wada

Journal:

Optical and Quantum Electronics

Year:

2001

Language:

english

File:

PDF, 383 KB

english, 2001

40

Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum-well structures

Neogi, A., Yoshida, H., Mozume, T., Georgiev, N., Wada, O.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2001

Language:

english

File:

PDF, 194 KB

english, 2001

41

Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells

Tsuchida, Hidemi, Simoyama, Takasi, Ishikawa, Hiroshi, Mozume, Teruo, Nagase, Masanori, Kasai, Jun-ichi

Journal:

Year:

2007

Language:

english

File:

PDF, 378 KB

english, 2007

42

Ultrafast All-Optical Switching Based on Inter-Subband Transition in GaN/AlGaN and InGaAs/AlAsSb Multiple Quantum Wells

Wada, Osamu, Yoshida, Haruhiko, Mozume, Teruo, Neogi, Arup, Gergiev, Nikolai, Akiyama, Tomoyuki, Asakawa, Kiyoshi, Suzuki, Nobuo, Iizuka, Norio, Kaneko, Kei

Journal:

Optics and Photonics News

Year:

2000

Language:

english

File:

PDF, 373 KB

english, 2000

43

Understanding the ultra-low intersubband saturation intensity in InGaAs-AlAsSb quantum wells

Gopal, A.V., Yoshida, H., Simoyama, T., Georgiev, N., Mozume, T., Ishikawa, H.

Journal:

IEEE Journal of Quantum Electronics

Year:

2003

Language:

english

File:

PDF, 311 KB

english, 2003

44

Intersubband absorption saturation in InGaAs-AlAsSb quantum wells

Gopal, A.V., Yoshida, H., Neogi, A., Georgiev, N., Mozume, T.

Journal:

IEEE Journal of Quantum Electronics

Year:

2002

Language:

english

File:

PDF, 226 KB

english, 2002

45

Intersubband absorption saturation in InGaAs-AlAs-AlAsSb coupled quantum wells

Gopal, A.V., Simoyama, T., Yoshida, H., Jun-ichi Kasai, Mozume, T., Ishikawa, H.

Journal:

IEEE Journal of Quantum Electronics

Year:

2003

Language:

english

File:

PDF, 326 KB

english, 2003

46

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Refractive index study of n-type InGaAs grown on InP substrates

Gozu, S., Mozume, T., Ishikawa, H.

Year:

2008

Language:

english

File:

PDF, 2.02 MB

english, 2008

47

Photoluminescence study of InGaAs/AlAsSb heterostructure

Georgiev, Nikolai, Mozume, Teruo

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 252 KB

english, 2001

48

Results of Malleostapediopexy

Yuge, Kurata, Daito, Kanehiko, Nakamura, Ken, Nakamura, Kenichi, Murakami, Mitsunobu, Hattori, Yasuo, Murakami, Tadanari, Mozume, Seiji

Journal:

Auris Nasus Larynx

Year:

1983

Language:

english

File:

PDF, 425 KB

english, 1983

49

InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550nm

Gozu, Shin-ichiro, Mozume, Teruo, Kuwatsuka, Haruhiko, Ishikawa, Hiroshi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 522 KB

english, 2013

50

Experimental and theoretical study of cross-phase modulation in InGaAs/AlAsSb coupled double quantum wells with a AlGaAs coupling barrier

Cong, G. W., Akimoto, R., Akita, K., Gozu, S., Mozume, T., Hasama, T., Ishikawa, H.

Journal:

Physical Review B

Year:

2009

Language:

english

File:

PDF, 788 KB

english, 2009